Hybrid ESC With Interdigitated Electrode Design

Thermal Sprayed ESCsIn semiconductor processes, as critical dimension gets smaller, more bias RF power is applied to induce more DC bias on wafer. This in turn makes the requirement for backside gas pressure higher and plasma erosion more critical in electrostatic chuck performance.  To overcome these challenges, FMI invented and commercialized a new advanced ESC using hybrid technology.

Additionally, To satisfy the high demand for ESC’s to clamp dielectric substrates such as sapphire, glass, etc., FMI has developed new interdigitated electrode designs and manufacturing processes. This advanced design and manufacturing methodology allow customers to choose an optimal design based on their specific process requirements.

FMI is dedicated to provide continued development for new material processing. Please see table below for additional information or contact us directly.

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Hybrid ESC With Interdigitated Electrode Design Material and Performance Parameters

Product Description Advanced Interdigitated Electrode ESC
Clamped Substrate Material Silicon, Sapphire, Glass
Electrode Gap ≥ 0.3mm
Purity > 99.9%, Alumina
Resistivity > 1.0 E15 Ω.cm
Current Leakage < 1µA
Dielectric Constant 7.2 - 7.5 @ 1MHz
Breakdown Voltage > 20 kV/mm
Typical Operation Voltage ±1000 V to ±4000 V
Clamping Force / Pressure > 50 Torr with < 2 sccm Gas Leak Rate
Release & Clamp Time < 1 sec

 

Reference 1 (Standard ESC):

Product Description Standard ESC
Purity > 99.9%, Alumina
Resistivity > 1.0 E15 Ω.cm
Current Leakage < 1µA
Dielectric Constant 7.2 - 7.5 @ 1MHz
Breakdown Voltage > 20 kV/mm
Typical Operation Voltage ±800 V to ±4000 V
Clamping Force / Pressure > 50 Torr with < 2 sccm Gas Leak Rate
Release & Clamp Time < 1 sec

 

Reference 2 (Hybrid ESC):

Product Description Hybrid ESC
Purity > 99.9%, Alumina  & Yttria
Plasma Erosion Resistance 7X higher than standard ESC
Resistivity > 1.0 E15 Ω.cm
Current Leakage < 1µA
Dielectric Constant 9.5 – 9.8 @ 1MHz
Breakdown Voltage > 20 kV/mm
Typical Operation Voltage ±800 V to ±4000 V
Clamping Pressure  > 50 Torr with < 2 sccm Gas Leak Rate
Clamping Force 30% higher than standard ESC
Release & Clamp Time < 1 sec

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